| 摘要 |
A semiconductor memory device includes a memory cell array, a bit line, a precharge circuit and a first sense amplifier. The memory cell array includes memory cells. The bit line connects commonly the memory cells in the same column. The precharge circuit applies a precharge potential to the bit line in reading data. The first sense amplifier amplifies data read onto the bit line. The precharge circuit determines the data read on the bit line using as a reference potential the precharge potential applied to the bit line by the precharge circuit.
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