VON HINTEN BELEUCHTETE BILDAUFNAHMEVORRICHTUNG MIT ERHÖHTER EMPFINDLICHKEIT VOM UV BIS NAH-IR-BEREICH

摘要

The present invention is a back illuminated image array device and a method of constructing such a device. The device is generally comprised of an array circuitry layer, a front layer, and a quartz layer. The array circuitry layer is defined on one surface of the front layer. The quartz layer is mounted on the other surface of the front layer. The method of fabricating the device is generally comprised of the following steps. The method provides a wafer having a thick silicon layer, an oxide layer on the thick silicon layer, and a front silicon layer on the oxide layer. The front layer has a first surface and a second surface with the second surface proximal to the oxide layer. Array circuitry is formed on the first surface of the front layer. A temporary layer is applied to the surface of the array circuitry. The thick silicon layer and the oxide layers are removed from the wafer, thereby, exposing the second surface of the front layer. A quartz layer is applied to the second surface. The temporary layer is removed from the array surface.