CONTACT CONDUCTOR FOR WAFER POLISHING, POLISHING PAD FOR SEMICONDUCTOR DEVICE WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR

摘要

Disclosed is a contact conductor for wafer polishing which enables to polish a conductor layer of a device wafer without causing damages thereto. Also disclosed are a polishing pad for semiconductor device wafers and a method for producing a semiconductor. Specifically disclosed is a conduct conductor (610) which is brought into electrical and mechanical contact with a conductor layer (D1). The conduct conductor (610) is mainly composed of a flake graphite material while containing 5-40 wt% of a synthetic resin material. By forming the conduct conductor (610) in such a manner that the spaces between flake graphite fine particles are filled with the resin, permeation of the electrolyte solution is prevented, thereby reducing separation of the flake crystals caused by generation of a gas.