| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of preventing device defects. SOLUTION: In the method for manufacturing a semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate, a seed layer is formed in the contact hole by an electroless plating process, and a metal wire is formed in the contact hole on the seed layer. COPYRIGHT: (C)2007,JPO&INPIT
|
