SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To form shallow bonding source/drain for a p-channel type field effect transistor employing strain Si technology. SOLUTION: A p-type diffusion region 5c mainly constituting the source/drain of a pMIS1p is formed of p+-SiGe/p-SiGe:C/p--SiGe, while p-type impurity of relatively high concentration is introduced into p+-SiGe and the p-type impurity of a relatively low concentration is introduced into the p--SiGe. It is necessary to introduce the p-type impurity of relatively high concentration to reduce a contact resistance. The depth of the p-type diffusion region 5c, however, is maintained so as to be shallow since the diffusion thereof is suppressed by the p-SiGe:C. COPYRIGHT: (C)2007,JPO&INPIT