| 发明名称 |
System and Method of Forming A Split-Gate Flash Memory Structure |
| 摘要 |
A method for forming a split-gate flash memory structure includes etching a first gate layer to form one or more floating gates and forming an isolation layer over the floating gates. An insulation layer is deposited over the isolation layer and planarized.
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| 申请公布号 |
US2007145457(A1) |
申请公布日期 |
2007.06.28 |
| 申请号 |
US20060562731 |
申请日期 |
2006.11.22 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG SHIEH F.;CHEN JIUN N.;TSAI LIEN Y. |
| 分类号 |
H01L29/76;H01L21/28;H01L21/336;H01L29/788;H01L31/0312 |
主分类号 |
H01L29/76 |
| 代理机构 |
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