发明名称 MULTI-PATH ACCESSIBLE SEMICONDUCTOR MEMORY DEVICE HAVING PORT STATE SIGNALING FUNCTION
摘要 A multi-path accessible semiconductor memory device having a shared memory area in a DRAM memory cell array that can be randomly accessed by a plurality of processors is provided. The multi-path accessible semiconductor memory device includes at least one shared memory area allocated in a memory cell array, operably connected to ports corresponding to a plurality of processors, each port used by the corresponding processor to selective access the shared memory area. The device further comprises an occupancy state signaling unit to output port occupancy state information to the processor requesting access to the shared memory area through the port used for the access request to indicate whether access to the shared memory area is allowed.
申请公布号 US2007150669(A1) 申请公布日期 2007.06.28
申请号 US20060466399 申请日期 2006.08.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN HYO-JOO;OH CHI-SUNG
分类号 G06F12/00 主分类号 G06F12/00
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