| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor crystal substrate, by which the warpage of crystal axis generated in a nitride semiconductor crystal substrate, obtained by utilizing a process for vapor depositing a nitride semiconductor crystal on a different kind of substrate, can be reduced. <P>SOLUTION: The method for manufacturing the nitride semiconductor crystal substrate includes: a process for vapor depositing a nitride semiconductor crystal on a different kind of substrate; a process for cutting/separating the nitride semiconductor crystal from the different kind of substrate; a process for arranging the nitride semiconductor crystal cut and separated from the different kind of substrate between a female mold having a concave curved surface and a male mold having a convex curved surface, which face to each other, so that the surface of the cut and separated side of the nitride semiconductor crystal faces to the male mold side; a process for pressing the nitride semiconductor crystal with the male mold and the female mold so as to reduce the warpage of the crystal axis of the nitride semiconductor crystal, and a process for slicing the nitride semiconductor crystal after pressing. <P>COPYRIGHT: (C)2007,JPO&INPIT |
