| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element, capable of suppressing degradation of element characteristics by controlling the occurrence of a lacking in an element portion at the time of performing an element isolation. SOLUTION: This semiconductor laser element is equipped with a GaAs substrate 1; an element portion 50 which includes an active layer 4 formed on a front surface of the GaAs substrate 1; a step portion 20a which is provided so as to extend along a side end part of the element portion 50; and a trench portion 30, which is provided so as to extend in parallel with the step portion 20a at the bottom surface of the step portion 20a and has a length shorter than that of the step portion 20a. COPYRIGHT: (C)2007,JPO&INPIT
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