| 摘要 |
Disclosed is a method for forming a common source line of a NOR-type flash memory. The method includes the steps of forming a photoresist pattern, which is used for exposing a common source area, on a plurality of stack gates formed on a semiconductor substrate, selectively etching a field oxide layer, which is previously formed in the common source area, by using the photoresist pattern as a mask, forming an amorphous layer on sidewalls of the stack gate patterns, and forming a common source line by implanting dopants into the common source area.
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