摘要 |
<p>Photoconductive memory targets, for TV cameras, comprising a transparent glass or quartz plate on which 1000-2000A degrees of SnO2 and 7-10 mu as2Se3 are deposited by evapn. The SnO2 layer is heated in an oxidising atmos to 450-550 degrees C to render it transparent. The As2Se3 is evapd. under 1-2 torr Ar/2-8% O2 (esp. 1 torr 95 Ar/5 O2). The memory formed by a light pattern can be erased in a single scanning operation due to increased thickness and porosity of the As2Se3 layer.</p> |