发明名称 |
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.</p> |
申请公布号 |
SG132505(A1) |
申请公布日期 |
2007.06.28 |
申请号 |
SG20040008363 |
申请日期 |
2001.12.05 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;KUWABARA HIDEOKI;FUJIKAWA SAISHI |
分类号 |
G02F1/136;G02F1/1362;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L21/336;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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