| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which realizes a perfect normally-off performance and can suppress the increase of on-resistance. <P>SOLUTION: A recess is formed in a first nitride semiconductor layer, and at least a highly insulative second nitride semiconductor layer is laminated on the recess which does not contain at least aluminum and is made to be a microcrystal structure by setting the epitaxial growing temperature to the level lower than a regular temperature. Thereafter, the structure is composed by contacting a control electrode on the second nitride semiconductor layer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
