| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a diffusion layer can be formed to be uniform in the surface concentration of a dopant element and the junction depth using a plurality of strip-like gate electrodes as a mask. SOLUTION: The semiconductor device has: a first group formed of at least one strip-like gate electrode and a second group formed of a plurality of strip-like gate electrodes on a surface of a gate insulating film; a first face in contact with the surface of the gate insulating film; a second face extending perpendicularly from a long side of the first face; and a third face curved and connecting the other ends of the first and the second face; wherein the at least one gate electrode of the first group and the gate electrodes of the second group are alternately arranged such that the curved third face of the at least one gate electrode of the first group is directed in a first direction and the curved third face of each gate electrode of the second group is directed in a second direction opposite to the first direction, and a gap between respective third faces of adjacent gate electrodes of the first and second groups is narrower than a gap between respective second faces of the adjacent gate electrodes of the first and second groups. Impurities are introduced through the gaps between the gate electrodes to form diffusion layers. COPYRIGHT: (C)2007,JPO&INPIT
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