| 摘要 |
A method is for measuring the characteristics of an insulator film (inner charge amount, film thickness, relative dielectric constant, surface voltage change due to a surface adsorbed substance, etc.) formed on a surface of a semiconductor substrate in a non-contact manner. This method includes: a step of measuring a measured surface voltage characteristic in a non-contact manner with respect to the insulator film; a step of provisionally setting a plurality of inner charge amounts; a step of calculating, with respect to each of the plurality of inner charge amounts, a theoretical surface voltage characteristic; a step of obtaining, with respect to each of the theoretical surface voltage characteristics, a mean value difference which is a difference between a surface voltage mean value of the measured surface voltage characteristics and a surface voltage mean value of the theoretical surface voltage characteristics, so that the mean value difference is set as a surface voltage change due to a surface adsorbed substance; a step of calculating, with respect to each of the theoretical surface voltage characteristics, a deviation of the measured surface voltage characteristic with respect to the corrected surface voltage characteristic; and a step of determining a set-point for the inner charge amount corresponding to the theoretical surface voltage characteristic which minimizes the deviation.
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