发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR REGIONAL STRESS CONTROL |
摘要 |
Mechanical stress control may be achieved using materials having selected elastic moduli. These materials may be selectively formed by implantation, may be provided as a plurality of buried layers interposed between the substrate and the active area, and may be formed by replacing selected portions of one or more buried layers. Any one or more of these methods may be used in combination. Mechanical stress control may be useful in the channel region of a semiconductor device to maximize its performance. In addition, these same techniques and structures may be used for other purposes besides mechanical stress control.
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申请公布号 |
US2007148894(A1) |
申请公布日期 |
2007.06.28 |
申请号 |
US20070682579 |
申请日期 |
2007.03.06 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ORLOWSKI MARIUS K.;ADAMS VANCE H. |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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