| 摘要 |
A resistance-change nanocrystal memory is proposed, which includes at least one memory unit. The memory unit further includes a channel and nanocrystals embedded in the channel. Electric charges in the nanocrystals are accessed, by applying a voltage to the channel. Then, conductivity of the channel is altered by the electric charges stored in the nanocrystals. Eventually, electric current is measured while an additional transistor is on, so as to achieve memory functions.
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