METHOD FOR MANUFACTURING SOI SUBSTRATE, AND SOI SUBSTRATE

摘要

In a method for manufacturing a SOI substrate by bonding method, a silicon oxide film is formed at least on a single crystal silicon substrate to be a SOI layer or a single crystal silicon substrate to be a supporting substrate, and the single crystal silicon substrate to be the SOI layer and the single crystal silicon substrate to be the supporting substrate are bonded through the silicon oxide film. Then in the case of performing bonding heat treatment to improve bonding strength, at least heat treatment for holding the work at a temperature within a range of 950°C to 1,100°C is performed, and then heat treatment at a temperature higher than 1,100°C is performed. Thus, the SOI substrate manufacturing method by which the SOI substrate having excellent gettering performance against metal contamination of the SOI layer can be efficiently manufactured, and the SOI substrate are provided.