| 摘要 |
A precharge control signal generator of a flash memory device is provided to stabilize the voltage of a precharge control signal, by allowing a sub repeater to control current driving capability of a main repeater circuit according to the precharge control signal generated by the main repeater circuit. In a precharge control signal generator of a flash memory device, a control circuit(110) generates a first precharge control signal. A main repeater circuit(120) changes the voltage of the first precharge control signal provided through a transmission line into a set voltage, and outputs a second precharge control signal having the changed voltage to a page buffer circuit(200) of the flash memory device. A sub repeater circuit(130) controls current driving capability of the main repeater circuit, in response to the second precharge control signal. The main repeater circuit includes a first inverter outputting an internal control signal to a control node in response to the first precharge control signal, and a second inverter outputting the second precharge control signal in response to the internal control signal.
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