| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device with little leakage current and a good light emitting efficiency in a low current region. <P>SOLUTION: In a light emitting device containing two or more light emitting devices, an undoped AlGaAs resistive layer 17 and a p-type AlGaAs layer 18 isolated for each light emitting device and serving as a carrier implantation layer are formed on an AlGaAs quantum well active layer 16, and at least a resistance value of the undoped AlGaAs resistive layer 17 between the isolated p-type AlGaAs layers 18 is greater than that of the p-type AlGaAs layer 18. The p-type AlGaAs layer 18 is isolated by etching, and this etching is stopped in the undoped AlGaAs resistive layer 17 between the p-type AlGaAs layers 18. An etching stop layer is formed between the undoped AlGaAs resistive layer 17 and the p-type AlGaAs layer 18. <P>COPYRIGHT: (C)2007,JPO&INPIT |
