| 发明名称 |
AlxGayIn1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N crystal substrate which is large and has a suitable dislocation density as a substrate for a semiconductor device, a semiconductor device containing the Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N crystal substrate, and its manufacturing method. <P>SOLUTION: In the Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N crystal substrate 12, the area of the main face is 10 cm<SP>2</SP>or larger and the total dislocation density in the region excluding a region having a distance of 5 mm or smaller from the outer circumference 12v is 1×10<SP>2</SP>cm<SP>-2</SP>to 1×10<SP>6</SP>cm<SP>-2</SP>. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2007161536(A) |
申请公布日期 |
2007.06.28 |
| 申请号 |
JP20050360621 |
申请日期 |
2005.12.14 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
FUJIWARA SHINSUKE;KAMIMURA TOMOYOSHI;OKAHISA TAKUJI;UEMATSU KOJI;OKUI MANABU;NISHIOKA SHIKO;HASHIMOTO MAKOTO |
| 分类号 |
C30B29/38;H01L29/201;H01L33/32 |
主分类号 |
C30B29/38 |
| 代理机构 |
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代理人 |
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