| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of effectively applying a stress on a channel with a damascene gate process employed therein. SOLUTION: The manufacturing method includes a process for forming a dummy gate on a substrate 1, a process for forming a source-drain part 7 on the substrate on both sides of the dummy gate, a process for forming an interlayer insulating film for exposing the upper surface of the dummy gate on the substrate 1, a process for forming a gate opening by removing the dummy gate, a process for embedding a gate electrode 13 in the gate opening, a process for removing the interlayer insulating film, and a process for forming a liner film 14 to cover the substrate 1 and the gate electrode 13. COPYRIGHT: (C)2007,JPO&INPIT
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