发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that contributes to the improvement of yield, by reducing chipping or suppressing the generation of chipping, and that manufactures the semiconductor device of high reliability, in a dicing process of a heterogeneous bonded substrate. SOLUTION: In the method for manufacturing the semiconductor device comprising different kind-bonded substrate 10 formed of a semiconductor substrate 12 and a heterogeneous substrate 11, consisting of a material other than a semiconductor bonded on the surface of the semiconductor substrate, the dicing process that semiconductor-chips (16) the heterogeneous substrate includes a first dicing process that forms trenches 12a, 12b having at least half the thickness of the semiconductor substrate or more to the surface of the semiconductor substrate and a second dicing process that cuts the semiconductor chip into a plurality of semiconductor chips by cutting the heterojunction substrate as a whole along the trench. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007165789(A) 申请公布日期 2007.06.28
申请号 JP20050363696 申请日期 2005.12.16
申请人 OLYMPUS CORP 发明人 KOJIMA KAZUAKI
分类号 H01L21/301 主分类号 H01L21/301
代理机构 代理人
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