| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering device where discharge impedance is fixedly held, and film thickness control at high precision is made possible, and to provide a film deposition method by sputtering. SOLUTION: A sputtering device where a film deposition chamber is provided with a target, and a film is deposited on a substrate held to a substrate holder confronted with the target in the film deposition chamber by sputtering is composed in such a manner that, to the front in the direction of the substrate in the target 1-2, a shielding member 1-5 with the potential same as that of the substrate disturbing the progress of electrons jumping out of the target is located. COPYRIGHT: (C)2007,JPO&INPIT
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