| 摘要 |
A multi-word line refresh-type semiconductor device may have a plurality of memory banks and performs a refresh operation simultaneously with respect to a plurality of word lines for each of the banks in a self-refresh mode. The semiconductor device includes an address controller for receiving a normal address and a refresh address and selectively outputting the received refresh address in a refresh mode, a fuse circuit for receiving the refresh address, determining whether the received refresh address corresponds to a word line to be repaired and outputting a redundancy word line enable signal and a first control signal according to a result of the determination, a first signal generator for, in response to a bit value for block selection of the refresh address and the first control signal, outputting a second control signal which defines a multi-word line refresh period, a refresh address generator for generating the refresh address in response to the second control signal, and a row controller for receiving the refresh address, second control signal and redundancy word line enable signal and controlling the refresh operation with respect to a memory core.
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