发明名称 |
METAL THIN FILM FOR INTERCONNECTION OF SEMICONDUCTOR DEVICE, INTERCONNECTION FOR SEMICONDUCTOR DEVICE, AND THEIR FABRICATION METHOD |
摘要 |
A metal thin film used in fabricating a damascene interconnection of a semiconductor device which exhibits excellent high temperature fluidity during high pressure annealing, and which can fabricate an interconnection for a semiconductor device which has a low electric resistance and stable high quality is provided. Also provided is an interconnection for a semiconductor device. More specifically, a metal thin film for use as an interconnection of a semiconductor device comprising a Cu alloy containing N at a content of not less than 0.4 at % to not more than 2.0 at %; and an interconnection for a semiconductor device fabricated by forming the metal thin film on an insulator film which is formed on a semiconductor substrate and which has grooves formed therein, and filling the metal thin film in the interior of the grooves by a high pressure annealing process are provided.
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申请公布号 |
US2007145586(A1) |
申请公布日期 |
2007.06.28 |
申请号 |
US20060465626 |
申请日期 |
2006.08.18 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO(KOBE STEEL, LTD.) |
发明人 |
ONISHI TAKASHI;MIZUNO MASAO;TAKEDA MIKAKO |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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