| 摘要 |
A half tone blankmask is provided to perform a large-size photomask wet etching process capable of controlling transmissivity and optical phase difference precisely, and a manufacturing method thereof. The method for manufacturing a half tone blankmask comprises the steps of: forming a transparent substrate(2); forming a semipermeable layer(4) formed of a material capable of wet etching and dry etching on the transparent substrate(2); forming a light blocking layer(6) on the semipermeable layer(4); forming an anti-reflective layer(8) on the light blocking layer(6); and coating the anti-reflective layer(8) with resist(10). The material used to form the semipermeable layer(4) is a single material selected from the group consisting of ITO(InSnO), tin(Sn), and indium(In), or a combination thereof.
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