| 摘要 |
A method for discriminating pure-vacancy and pure-interstitial areas in a defect free silicon wafer is provided to analyze defect distributions therein exactly by using a metal pollution fluid. A wafer is cleaned by a cleaning agent containing fluorine. A rear surface of the wafer is polluted with a small amount of metal pollution fluid. The metal pollution fluid contains copper or nickel of 100 to 1000 ppm. The wafer is dried and thermal-treated in order that the metal pollution fluid is diffused toward the whole surface of the wafer. A front surface of the wafer is selectively etched. A portion of the rear surface, in which the metal pollution fluid is represented as a haze type, is determined to be an interstitial area.
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