| 摘要 |
An image sensor is provided to increase a voltage applied to a photodiode by reducing the thickness of a gate insulation layer of a transfer transistor and/or a reset transistor. A first transistor resets the potential of a photodiode. A second transistor amplifies and outputs the charges accumulated in the photodiode. A third transistor switches and outputs the signal amplified by the second transistor. The second and third transistors have a gate electrode having higher resistance than that of a first gate electrode of the first transistor so as to have a higher threshold voltage than that of the first transistor. The first gate electrode can be made of a first conductive layer. A fourth transistor transfers the charges accumulated in the photodiode to a gate electrode of the second transistor.
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