| 摘要 |
A method for fabricating a CMOS image sensor is provided to make air regions have a uniform thickness regardless of the position of a pattern by performing an etch process on the air region while using an etch stop layer. On a semiconductor substrate(300) including a photodiode(301), an interlayer dielectric(302) and an etch stop layer(303) that have a contact hole(304) exposing a part of the substrate are sequentially formed. The etch stop layer can be made of a nitride layer. The contact hole is filled with a conductive plug(305) made of tungsten. A metal interconnection(306) is formed on the conductive plug, made of aluminum. An interlayer dielectric(307) is deposited on the resultant structure. The interlayer dielectric corresponding to the photodiode is selectively etched to form an air region(308). The etch stop layer exposed by the air region is removed by an etch process. The air region is sealed.
|
