| 摘要 |
FIELD: semiconductor device manufacturing technology. ^ SUBSTANCE: double-layer insulating system is produced from silicon dioxide films, (0.05 - 0.09)mum thick, and silicon nitride, (0.04-0.08) mum thick, on silicon semiconductor substrate. Semiconductor device produced in the process is characterized in enhanced mobility and manufacturability. ^ EFFECT: reduced amount of flaws, enhanced yield. ^ 1 cl, 1 tbl |
