Broadband balun structure

摘要

The device has two distributed amplifying structures including unit cells that form a series-parallel connection, where the structures have virtually identical input impedances. The connection includes four inductances (46, 49) that are arranged in two by two series. The unit cells include an active amplifier element (410) that is arranged in parallel with the inductances. Another active amplifier element has a field effect transistor (52) that is associated with the former amplifier element to form an impedance matching stage.