发明名称 Phase change memory materials
摘要 An optical or electronic phase change memory material comprises gallium, a lanthanide, and a chalcogenide including compounds of gallium, lanthanum and sulphur (GLS) as well as other compounds in which there is substitution of sulphur with oxygen, selenium and/or tellurium. Moreover, lanthanum can be substituted with any other lanthanide series element.
申请公布号 GB2433647(A) 申请公布日期 2007.06.27
申请号 GB20050025901 申请日期 2005.12.20
申请人 UNIVERSITY OF SOUTHAMPTON 发明人 DANIEL WILLIAM HEWARK;ARSHAD KHAWAR MAIRAJ;RICHARD J CURRY;ROBERT E SIMPSON
分类号 H01L45/00;G11B7/243;G11B7/258;G11B7/2585;G11C16/02 主分类号 H01L45/00
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