METHOD OF FABRICATING THE METAL CONTACT IN SEMICONDUCTOR DEVICE

摘要

A method for forming metal contact of a semiconductor device is provided to reduce contact resistance by performing an SPM(Sulfuric acid Peroxide Mixture) cleaning process after forming a contact hole to remove a metal oxide layer on an exposed surface of a metal electrode layer in the contact hole. A part of an interlayer dielectric(320) covering a metal electrode layer on a semiconductor substrate(300) is removed to form a contact hole exposing a side of the metal electrode layer. A cleaning process is performed on the contact hole by using an SPM(Sulfuric acid Peroxide Mixture) cleaning liquid to remove a metal oxide layer on an exposed surface of the metal electrode layer. A metal layer is gap-filled in the contact hole to form a metal contact. The metal electrode layer is a plate electrode(313) including titanium nitride.