| 摘要 |
An organic TFT(thin film transistor) is provided to form an insulation layer having an excellent dielectric constant without damaging an organic semiconductor layer by including an insulation layer made of water-soluble polymer on an organic semiconductor layer in a TFT. A source electrode(14a) and a drain electrode(14b) are formed on a substrate(11). An organic semiconductor layer(15) is electrically connected to the source electrode and the drain electrode. A gate electrode(16) is insulated from the organic semiconductor layer. An insulation layer(13) is interposed between the organic semiconductor layer and the gate electrode, made of water-soluble polymer having a dielectric constant of 1.5~11.0 and having a thickness of 500~10000 A.
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