发明名称 |
LIGHT EMITTING DIODE CHIP |
摘要 |
A light emitting diode chip is provided to improve light extraction efficiency and to implement high efficiency large-scale light emitting diode by realizing L/W>10, wherein L is a length of a substrate and W is a width thereof. A light emitting structure(150) is comprised of a first conductive type semiconductor layer(103), an active layer(105), and a second conductive type semiconductor layer(107). The first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer are sequentially layered on a substrate(101). A length of the substrate is L and a width thereof is W and then a relationship of L/W>10 is satisfied.
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申请公布号 |
KR100735311(B1) |
申请公布日期 |
2007.06.27 |
申请号 |
KR20060036372 |
申请日期 |
2006.04.21 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KOIKE MASAYOSHI;KIM, BUM JOON |
分类号 |
H01L33/32;H01L33/60;H01L33/62 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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