发明名称 LIGHT EMITTING DIODE CHIP
摘要 A light emitting diode chip is provided to improve light extraction efficiency and to implement high efficiency large-scale light emitting diode by realizing L/W>10, wherein L is a length of a substrate and W is a width thereof. A light emitting structure(150) is comprised of a first conductive type semiconductor layer(103), an active layer(105), and a second conductive type semiconductor layer(107). The first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer are sequentially layered on a substrate(101). A length of the substrate is L and a width thereof is W and then a relationship of L/W>10 is satisfied.
申请公布号 KR100735311(B1) 申请公布日期 2007.06.27
申请号 KR20060036372 申请日期 2006.04.21
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KOIKE MASAYOSHI;KIM, BUM JOON
分类号 H01L33/32;H01L33/60;H01L33/62 主分类号 H01L33/32
代理机构 代理人
主权项
地址