Improvements in integrated multistate magnetic static write-read and erase memory

摘要

A method of arranging data in a memory cell array comprising the steps of:
(a) determining a standard length of a word of data to be stored in said memory cell array by specifying a maximum number of binary bits said word of data can contain;
(b) allocating address space within said memory cell array in such a manner that every possible unique way said maximum number of binary bits comprising said standard length of said word of data can be arranged results in the formation of a unique standard length word of data and said unique standard length word of data is allocated in corresponding unique standard length address space within said memory cell array;
(c) storing each said unique standard length word of data at the corresponding allocated unique standard length address space within said memory cell array.