发明名称 |
INTEGRATED CIRCUIT WITH PHASE-CHANGE MEMORY CELLS AND METHOD FOR ADDRESSING PHASE-CHANGE MEMORY CELLS |
摘要 |
The present invention relates to integrated circuit comprising a plurality of bit-lines (bl) and a plurality of word-lines (wl) as well as a plurality of memory-cells (MC) coupled between a separate bit-line/word-line pair of the plurality of bit-lines (bl) and word-lines (wl) for storing data in the memory cell. Each memory cell (MC) comprises a selecting unit (T) and a programmable resistance (R). The value of the phase-change resistance (R) is greater than the value of a first phase-change resistance (Ropt) defined by a supply voltage (Vdd) divided by a maximum drive current (Im,) through said first phase-change resistor (Ropt).
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申请公布号 |
KR20070067150(A) |
申请公布日期 |
2007.06.27 |
申请号 |
KR20077008869 |
申请日期 |
2007.04.19 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
LANKHORST MARTIJN H. R.;HUIZING HENDRIK G. A. |
分类号 |
G11C13/02 |
主分类号 |
G11C13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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