NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

A nonvolatile semiconductor memory device is provided to perform a high speed read operation without an operation error and being influenced by noise of adjacent bits. In a nonvolatile semiconductor memory device having a main memory and a management memory accumulated with condition data for internal processing to perform operation management of the main memory, one bit of the management memory is constituted by a plurality of memory cells. The memory cells are arranged in a line along a word line(18), and deployed in an array along the direction of word lines and bit lines. The word line performs a read operation by a word driver(19), and the bit line performs a read operation by transferring an output signal to a read circuit(14) through a bit line selection transistor. One side memory cell of adjacent bits is not selected during the read operation.