| 摘要 |
A method for forming a storage node contact in a semiconductor device is provided to guarantee a more line width of the upper part of a contact hole in a direction that a bitline is extended, by performing a wet etch process for inducing the extension of the width of the upper part of the contact hole while effectively preventing lifting-off of an etch mask of a line type. Bitline stacks(500) capable of being not extended are formed in a first region on the edge of a substrate. An insulation layer is formed on the bitline stacks. An etch mask capable of being not extended is formed on the insulation layer in a second region on the edge of the substrate such that the second region is equal to the first region or extended to the inside of the first region. The insulation layer exposed by the etch mask is etched to form a contact hole. A second insulation layer can be formed on the semiconductor substrate under the bitline stacks. The process for forming the contact hole can include the following steps. The insulation layer is partially etched to partial contact hole by using the etch mask. The sidewall of the partial contact hole is etched to extend its width. The second insulation layer exposed to the bottom of the partial contact hole is selectively etched to form the contact hole.
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