METHOD FOR FABRICATING A ZNS BASED LIGHT EMITTING DEVICE AND A ZNS BASED LIGHT EMITTING DEVICE FABRICATED BY THE METHOD

摘要

A method for manufacturing a ZnS light emitting device and the ZnS light emitting device manufactured using the same are provided to reduce lattice unconformity between a AlxInyGa1-x-yN semiconductor layer and a porous silicon substrate by using the porous silicon substrate as a substrate in order to grow the AlxInyGa1-x-yN semiconductor layer. A porous silicon substrate(100) is prepared. A p-type semiconductor layer(400) that is AlxInyGa1-x-yN(0 x,y,x+y 1) compound semiconductor material is formed on the porous silicon substrate. A ZnO(zinc oxide) active layer(500) is formed on the p-type semiconductor layer. An n-type blende(ZnS) semiconductor layer(600) is formed on the ZnO active layer. The n-type blende(ZnS) semiconductor layer, the ZnO active layer, and a part of the p-type semiconductor layer are etched to expose the part of the p-type semiconductor layer. Electrodes(700,800) are formed on the n-type blende(ZnS) semiconductor layer and the exposed p-type semiconductor layer.