| 摘要 |
A method for forming a copper line in a semiconductor device is provided to enhance contact resistance, electro migration, and stress migration between upper and lower copper lines by forming a copper nonproliferation film on an exposed top portion of a lower copper line. A first interlayer dielectric film(104) is formed on a semiconductor substrate(100), and provided with a first dual damascene pattern(105). A first copper line(106) is formed in the first dual damascene pattern. A top portion of the first interlayer dielectric film is removed by a preset thickness to expose both sidewalls of the top portion of the first copper line. A copper nonproliferation film(107) is formed on the first interlayer dielectric film. A second interlayer dielectric film(108) is formed on the copper nonproliferation film, and provided with a second dual damascene pattern(109) which allows a portion of the first copper line to be exposed. A second copper line(110) is formed within the second dual damascene pattern.
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