| 摘要 |
1,274,986. MNOS transistors. NATIONAL CASH REGISTER CO. 19 Oct., 1970 [27 Oct., 1969], No. 49455/70. Heading H1K. [Also in Division C1] An MNOS field effect transistor comprises a Si substrate having P-type source region 52, N- type region 56, and P-type drain region 54, Si oxide layer 50, Si nitride layer 58, and Al gate electrode 60. The oxide layer is formed by heating the Si substrate in a stream of O 2 + N 2 , and the nitride layer by heating in SiH 4 + NH 3 , and both are etched to extend only to the edge of the P-type regions. The Al layer, and electrodes 63 and 65, are deposited by vacuum evaporating and etching. |
