发明名称 Comparison of current read address with previous write address in a memory with a high burst rate write data path
摘要 A write data path (400, fig 6) for an array of memory cells receives a serial burst of data bits from an external terminal (426, fig 6) and stores these bits in a corresponding number of buffers (422, fig 6). The data in the buffers is then transferred to memory cell array (410, fig 6) using two sequential parallel transfers from half of the buffers and then the other half by connecting the buffers to the common data lines (412, fig 6) through switches (424, fig. 6). In alternative arrangements the buffers can be provided as a first and a second buffer (432a, 432b fig 7) with corresponding serial to parallel converters (430a, 430b fig 7) or the first and second buffers (442a, 442b fig 8) which can be connected by the first switching circuit (446a fig 8) with the second switching circuit (446b fig 8) connecting the second buffer to the memory cell array. An additional circuit is provided to compare an address associated with a read command with an address of a preceding write operation; if the two addresses match the read operation is fulfilled using data latched in an additional data latch 2016. If the two addresses do not match then the read command is fulfilled by accessing the data in the memory cell array. The additional circuit comprises an address latch 2012, address comparison circuit 2014 and data latch 2016.
申请公布号 GB2433627(A) 申请公布日期 2007.06.27
申请号 GB20060025944 申请日期 2004.06.03
申请人 SAMSUNG ELECTRONICS COMPANY LIMITED 发明人 YUN-SANG LEE;JUNG-BAE LEE;ONE-GYUN LA;SUNG-RYUL KIM
分类号 G11C7/10;G11C11/407;G11C5/00;G11C11/409;G11C11/4093;H03M9/00 主分类号 G11C7/10
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