| 摘要 |
A method for fabricating a semiconductor device is provided to form a source/drain and a contact in contact with the source/drain by one photolithography process by implanting ions through a contact hole for forming the contact to form the source/drain and by forming a plug in the contact hole. A gate(13) is formed on a semiconductor substrate(11). An insulation layer in which an oxide layer(14), an interlayer oxide layer(15) and an etch barrier layer(16) are sequentially stacked is formed on the resultant structure. After a photoresist pattern is formed on the insulation layer, the insulation layer is etched by using the photoresist pattern as an etch mask to form a contact hole exposing a part of the substrate at a side of the gate. Ions are implanted into the exposed substrate to form a source/drain region(17). A contact is formed in the contact hole, coming in contact with the upper part of the source/drain region.
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