CMOS IMAGE SENSOR, AND METHOD FOR FABRICATING THE SAME

摘要

A CMOS image sensor is provided to improve optical sensing efficiency of a CMOS image sensor by removing refraction and reflection defects of incident light caused by a multilayered structure while using an air gap region. A substrate(301) having a photodiode(303) is prepared. An air gap region is formed on the photodiode wherein the width of the air gap region doesn't exceed the width of the photodiode region to increase a light condensing ratio. A barrier layer is formed on the wall and bottom of the air gap region. A passivation layer is formed on the air gap region. An insulation layer can be formed on the sidewall of the barrier layer.