| 摘要 |
A method for forming a pattern in a semiconductor device is provided to enhance an etching resistance of the semiconductor device by performing an ion injection process using a photoresist pattern before etching a substrate. A first substrate(200), a second substrate(201), and photoresist are sequentially formed. A portion of the photoresist is selectively exposed. The exposed photoresist is developed to form a photoresist pattern(202') for disclosing a portion of the second substrate. An ion injection process is performed into the photoresist pattern. The ion injection process uses one selected from the group consisting of As, P, In, B and BF2. The photoresist pattern, to which the ion injection process is completed, is used as an etching mask to etch the second substrate.
|
