| 摘要 |
A method for forming a photosensitive layer in a semiconductor device is provided to prevent bad coating of the photosensitive layer due to a stepped portion by etching a hard mask, burying it with a planarized layer, and applying the photosensitive layer. An interlayer dielectric(17) is formed on a semiconductor substrate(11) with an alignment key(13) and an overlay key(15). A hard mask(19) is formed on the interlayer dielectric. Then, the hard mask on the alignment key and the overlay key is etched and planarized to expose the interlayer dielectric. A planarized layer is formed on the entire surface to bury a gap of the hard mask. The planarized layer is etched to expose the hard mask, and an anti-reflective film(23) is formed on the entire surface to form a photosensitive layer.
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