| 摘要 |
A method for forming a micro pattern in a semiconductor device is provided to improve a photolithography process by etching a layer to be etched using a photomask. A double hard mask pattern(26) is formed on a layer(200) to be etched in order of a first hard mask and a second hard mask. The second hard mask is selectively etched to form a second hard mask pattern having a narrow width on the first hard mask. A photoresist pattern(27) is formed to fill a space provided by the first and second hard mask patterns. The second hard mask pattern is removed, and the first mask is etched to form a first hard mask pattern. The layer to be etched is etched by using the first hard mask pattern as a mask.
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