DETECTING METHOD FOR PLASMA DAMAGE PATERN ON IMAGE SENSOR

摘要

A method for avoiding plasma damages to an image sensor is provided to avoid generation of dark current by preventing electromagnetic wave of a wavelength damaging a photodiode in a plasma etch process. An image sensor device like a plurality of photodiodes, a transfer transistor and the like is fabricated on a substrate(1). An insulation layer(2) is deposited on the upper surface of the resultant structure. An electromagnetic wave blocking layer and photoresist are sequentially coated on the insulation layer. The photoresist is patterned. After the electromagnetic wave blocking layer under the photoresist is removed to expose the insulation layer, a contact hole is formed in the insulation layer by a plasma etch process. The photoresist pattern and the electromagnetic wave blocking layer are removed. The electromagnetic wave blocking layer can be an organic siloxane whose main component is silicon, oxygen and carbon.